Home Electronics Vishay Intertechnology 30 V N-Channel MOSFET With Supply Flip Expertise Delivers Greatest in Class RDS(ON) All the way down to 0.71 mΩ in PowerPAK 1212-F

Vishay Intertechnology 30 V N-Channel MOSFET With Supply Flip Expertise Delivers Greatest in Class RDS(ON) All the way down to 0.71 mΩ in PowerPAK 1212-F

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Vishay Intertechnology 30 V N-Channel MOSFET With Supply Flip Expertise Delivers Greatest in Class RDS(ON) All the way down to 0.71 mΩ in PowerPAK 1212-F

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Gadget Gives Excessive Energy Density and Improved Thermal Efficiency in 3.3 mm x 3.3 mm PowerPAK 1212 F Bundle With Middle Gate Design

Vishay Intertechnology, Inc. has launched a flexible new 30 V n-channel TrenchFET Gen V energy MOSFET that delivers elevated energy density and enhanced thermal efficiency for industrial, pc, shopper, and telecom functions. That includes supply flip know-how within the 3.3 mm by 3.3 mm PowerPAK 1212-F package deal, the Vishay Siliconix SiSD5300DN gives best-in-class on-resistance of 0.71 mΩ at 10 V and on-resistance instances gate cost — a important determine of benefit (FOM) for MOSFETs utilized in switching functions — of 42 mΩ*nC.

Occupying the identical footprint because the PowerPAK 1212-8S, the gadget launched immediately provides 18 % decrease on-resistance to extend energy density, whereas its supply flip know-how reduces thermal resistance by 63°C/W to 56 °C/W. As well as, the SiSD5300DN’s FOM represents a 35 % enchancment over previous-generation gadgets, which interprets into lowered conduction and switching losses to save lots of power in energy conversion functions.

PowerPAK 1212-F supply flip know-how reverses the same old proportions of the bottom and supply pads, extending the realm of the bottom pad to supply a extra environment friendly thermal dissipation path and thus selling cooler operation. On the identical time, the PowerPAK 1212-F minimizes the extent of the switching space, which helps to cut back the affect of hint noise. Within the PowerPAK 1212-F package deal particularly, the supply pad dimension will increase by an element of 10, from 0.36 mm² to 4.13 mm², enabling a commensurate enchancment in thermal efficiency. The PowerPAK 1212-F’s middle gate design additionally simplifies the parallelization of a number of gadgets on a single-layer PCB.

The supply flip PowerPAK 1212-F package deal of the SiSD5300DN is very appropriate for functions resembling secondary rectification, energetic clamp battery administration methods (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and cargo switches. Typical finish merchandise embody welding gear and energy instruments; servers, edge gadgets, supercomputers, and tablets; lawnmowers and cleansing robots; and radio base stations.

The gadget is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.

Key Specification Desk:

PowerPAK 1212-F

PowerPAK 1212-8S

Bundle dimension: 3.3 mm x 3.3 mm

Bundle dimension: 3.3 mm x 3.3 mm

Supply pad dimension: 4.13 mm²

Supply pad dimension: 0.36 mm²

Thermal resistance: 56 °C/W

Thermal resistance: 63 °C/W

Lowest out there on-resistance in Gen V know-how:
SiSD5300DN: 0.87 mΩ (most)

Lowest out there on-resistance in Gen V know-how:
SiSS54DN: 1.06 mΩ (most)

 

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