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Constructed on Trench IGBT Know-how, Half-Bridge Units Supply Selection of Low VCE(ON) or Low Eoff for Excessive-Present Inverter Phases
Vishay Intertechnology, Inc. has launched 5 new half-bridge IGBT energy modules within the newly redesigned INT-A-PAK package deal. Constructed on Vishay’s Trench IGBT know-how, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N provide designers a alternative of two finest at school applied sciences — low VCE(ON) or low Eoff — to decrease conduction or switching losses in excessive present inverter phases for transportation, vitality, and industrial functions.
The half-bridge gadgets launched at this time mix Trench IGBTs — which ship improved energy financial savings versus different gadgets in the marketplace — with Gen IV FRED Pt anti-parallel diodes with ultra-soft reverse restoration traits. Providing a brand new gate pin orientation, the modules’ compact INT-A-PAK package deal is now 100 % appropriate with the 34 mm industry-standard package deal to supply a mechanical drop-in alternative.
The commercial-level gadgets will probably be utilized in energy provide inverters for railway gear; vitality technology, distribution, and storage methods; welding gear; motor drives; and robotics. To scale back conduction losses in output phases for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S provide an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated present. For prime-frequency energy functions, the VS-GT100TS065N and VS-GT200TS065N provide extraordinarily low switching losses, with Eoff all the way down to 1.0 mJ at +125 °C and rated present.
The RoHS-compliant modules characteristic 650 V collector-to-emitter voltages, steady collector present from 100 A to 200 A, and really low junction-to-case thermal resistance. UL-approved file E78996, the gadgets may be immediately mounted to heatsinks and provide low EMI to cut back snubbing necessities.
Key Specification Desk:
Half # |
VCES |
IC |
VCE(ON) |
Eoff |
Pace |
Bundle |
@ IC and +125 °C |
||||||
VS-GT100TS065S |
650 V |
100 A |
1.02 V |
6.5 mJ |
DC to 1 kHz |
INT-A-PAK |
VS-GT150TS065S |
650 V |
150 A |
1.05 V |
10.3 mJ |
DC to 1 kHz |
INT-A-PAK |
VS-GT200TS065S |
650 V |
200 A |
1.07 V |
13.7 mJ |
DC to 1 kHz |
INT-A-PAK |
VS-GT100TS065N |
650 V |
100 A |
2.12 V |
1.0 mJ |
8 kHz to 30 kHz |
INT-A-PAK |
VS-GT200TS065N |
650 V |
200 A |
2.13 V |
3.86 mJ |
8 kHz to 30 kHz |
INT-A-PAK |
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