Infineon Applied sciences has introduced a collaboration with Worksport Ltd. Worksport will use Infineon’s GaN energy semiconductors GS-065-060-5-B-A within the converters for its moveable energy stations to extend effectivity and energy density. Enabled by Infineon’s GaN transistors, the ability converters will probably be lighter and smaller in dimension with decreased system prices. As well as, Infineon will assist Worksport within the optimization of circuits and structure design to additional cut back dimension and enhance energy density.

“Infineon’s high-quality customary and strong provide chain present us with the most effective parts to make sure power-dense converters for our COR system product line and contribute to a first-class finish product efficiency,” mentioned Worksport CEO Steven Rossi. The corporate’s COR battery system could be built-in right into a pickup truck or recharged by any photo voltaic panel or wall outlet. By changing the previous silicon swap within the energy converter with Infineon’s GaN energy semiconductors and working the transistors at increased switching frequency, Worksport will have the ability to cut back the battery system weight by 33 p.c and system prices by as much as 25 p.c.

The working relationship with Infineon may even assist Worksport to scale back CO2 within the manufacturing course of. GaN is proving itself as a game-changing know-how throughout many markets and functions. For instance, in information facilities, GaN options have a worldwide vitality financial savings potential of 21 TWh yearly, 10 million tons of Carbon Dioxide (CO2) equal. “As a way to additional drive electrification and decarbonization, the business’s energy designs require innovation,” mentioned Johannes Schoiswohl, Enterprise Line Head GaN Techniques of Infineon’s Energy & Sensor Techniques Division. “With our GaN energy semiconductors we allow Worksport to create the following technology moveable energy stations that customers require.”

Infineon’s GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon energy transistor. It affords very low junction-to-case thermal resistance for demanding high-power functions resembling on-board chargers, industrial motor drives and photo voltaic inverters. Moreover, it options easy gate drive necessities (0 V to six V) and a transient tolerant gate drive (-20 / +10 V).

Availability

The GS-065-060-5-B-A is out there in a bottom-cooled, low-inductance GaNPX® bundle.