Infineon Applied sciences AG has filed a lawsuit, by means of its subsidiary Infineon Applied sciences Austria AG, towards Innoscience (Zhuhai) Know-how Firm, Ltd., and Innoscience America, Inc. and associates (hereinafter: Innoscience). Infineon is in search of a everlasting injunction for infringement of a United States patent referring to gallium nitride (GaN) expertise owned by Infineon. The patent claims cowl core elements of GaN energy semiconductors encompassing improvements that allow the reliability and efficiency of Infineon’s proprietary GaN units. The lawsuit was filed within the district court docket of the Central District of California.

Infineon alleges that Innoscience infringes the Infineon patent talked about above by making, utilizing, promoting, providing to promote and/or importing into the US varied merchandise, together with GaN transistors for quite a few functions, inside automotive, knowledge centres, photo voltaic, motor drives, shopper electronics, and associated merchandise utilized in automotive, industrial, and business functions.

“The manufacturing of gallium nitride energy transistors requires fully new semiconductor designs and processes”, stated Adam White, President of Infineon’s Energy & Sensor Methods Division. “With almost twenty years of GaN expertise, Infineon can assure the excellent high quality required for the very best efficiency within the respective finish merchandise. We vigorously shield our mental property and thus act within the curiosity of all prospects and finish customers.” Infineon has been investing in R&D, product improvement and manufacturing experience associated to GaN expertise for many years. Infineon continues to defend its mental property and shield its investments.

On 24 October 2023, Infineon introduced the closing of the acquisition of GaN Methods Inc., turning into a number one GaN powerhouse and additional increasing its main place in energy semiconductors. Infineon leads the business with its GaN patent portfolio, comprising round 350 patent households. Market analysts count on the GaN income for energy functions to develop by 49% CAGR to roughly US$2 billion by 2028 (supply: Yole, Energy SiC and GaN Compound Semiconductor Market Monitor This autumn 2023). Gallium nitride is a large bandgap semiconductor with superior switching efficiency that enables smaller measurement, greater effectivity and lower-cost energy methods.