Infineon Applied sciences AG introduces the brand new CoolSiC MOSFETs 2000 V within the TO-247PLUS-4-HCC bundle to fulfill designers’ demand for elevated energy density with out compromising the system’s reliability even underneath demanding excessive voltage and switching frequency situations. The CoolSiC MOSFETs provide a better DC hyperlink voltage in order that the facility could be elevated with out rising the present. It’s the first discrete silicon carbide gadget with a breakdown voltage of 2000 V in the marketplace and is available in a TO-247PLUS-4-HCC bundle with a creepage distance of 14 mm and a clearance distance of 5.4 mm. With low switching losses, the gadgets are perfect for photo voltaic (e.g. string inverters) in addition to vitality storage programs and electrical car charging functions.

The CoolSiC MOSFET 2000 V product household is ideally fitted to excessive DC hyperlink programs with as much as 1500 V_DC. In comparison with 1700 V SiC MOSFETs, the gadgets additionally present a sufficiently excessive overvoltage margin for 1500 V_DC programs. The CoolSiC MOSFETs ship a benchmark gate threshold voltage of 4.5 V and are geared up with a sturdy physique diode for arduous commutation. Because of the .XT connection expertise, the parts provide first-class thermal efficiency. They’re additionally extremely proof against humidity.

Along with the CoolSiC MOSFETs 2000 V, Infineon will quickly be launching the matching CoolSiC diodes: The primary launch would be the 2000 V diode portfolio within the TO-247PLUS 4-pin bundle within the third quarter of 2024, adopted by the 2000 V CoolSiC diode portfolio within the TO-247-2 bundle within the closing quarter of 2024. These diodes are significantly appropriate for photo voltaic functions. An identical gate driver portfolio can be accessible.